tm february 2008 FDT55AN06LA0 n-channel powertrench ? mosfet ?2008 fairchild semiconductor corporation FDT55AN06LA0 rev. a www.fairchildsemi.com 1 FDT55AN06LA0 n-channel powertrench ? mosfet 60v, 11a, 55m : features ?r ds(on) = 44m : ( typ.)@ v gs = 5v, i d = 11a ?q g(tot) = 7.6nc( typ.),@ v gs = 5v. ? low miller charge ? low q rr body diode ? uis capability ? rohs compliant applications ? motor / body load control ? power train management ? dc-ac converters ? distributed power architectures and vrms d g s g d s d sot-22 3 mosfet maximum ratings t c = 25 o c unless otherwise noted thermal characteristics symbol parameter ratings units v dss drain to source voltage 60 v v gss gate to source voltage 20 v i d drain current -continuous (t c = 25 o c, v gs = 10v) 12.1 a -continuous (t c = 25 o c, v gs = 5v) 11 -continuous (t c = 10 o c, v gs = 5v) 7 i dm drain current - pulsed (note 1) 36 a e as single pulsed avalanche energy (note 2) 34 mj p d power dissipation (t c = 25 o c) 8.9 w - derate above 25 o c 0.071 w/ o c t j , t stg operating and storage temperature range -55 to +150 o c t l maximum lead temperature for soldering purpose, 1/8 from case for 5 seconds 300 o c symbol parameter ratings units r t jc thermal resistance, junction to case 14 o c/w r t ja thermal resistance, junction to ambient 100 *when mounted on the minimum pad size recommended (pcb mount)
FDT55AN06LA0 n-channel powertrench ? mosfet FDT55AN06LA0 rev. a www.fairchildsemi.com 2 package marking and ordering information t c = 25 o c unless otherwise noted electrical characteristics off characteristics on characteristics dynamic characteristics switching characteristics drain-source diode characteristics device marking device package reel size tape width quantity FDT55AN06LA0 FDT55AN06LA0 sot-223 330mm 12mm 4000 symbol parameter test conditions min. typ. max. units bv dss drain to source breakdown voltage i d = 250 p a, v gs = 0v, t j = 25 o c60 - - v i dss zero gate voltage drain current v ds = 50v, v gs = 0v - - 1 p a v ds = 50v, t c = 150 o c - - 250 i gss gate to body leakage current v gs = 20v, v ds = 0v - - 100 na v gs(th) gate threshold voltage v gs = v ds , i d = 250 p a1.0-3.0v r ds(on) static drain to source on resistance v gs = 10v, i d = 11a v ds = 5v, i d = 11a - 36 44 46 55 m : c iss input capacitance v ds = 25v, v gs = 0v f = 1mhz - 849 1130 pf c oss output capacitance - 88 115 pf c rss reverse transfer capacitance - 37 55 pf t on turn-on time v dd = 30v, i d = 11a v gs = 5v, r gs = 18 : -3478ns t d(on) turn-on delay time - 10 30 ns t r turn-on rise time - 24 58 ns t d(off) turn-off delay time - 23 56 ns t f turn-off fall time - 12 34 ns t off turn-off time -3580ns q g(tot) total gate charge at 10v v ds = 30v, i d = 11a v gs = 0v to 5v - 7.6 10 nc q gs gate to source gate charge - 2.8 - nc q gd gate to drain miller charge - 2.7 - nc i s maximum continuous drain to source diode forward current - - 12 a i sm maximum pulsed drain to source diode forward current - - 36 a v sd drain to source diode forward voltage v gs = 0v, i sd = 11a - - 1.25 v t rr reverse recovery time v gs = 0v, i sd = 11a di f /dt = 100a/ p s -25-ns q rr reverse recovery charge - 27 - nc notes: 1: repetitive rating: pulse width limited by maximum junction temperature 2: l = 0.21mh, i as = 18a, v dd = 50v, r g = 25 : , starting t j = 25c 3: i sd d 11a, di/dt d 200a/ p s, v dd d bv dss , starting t j = 25c 4: pulse test: pulse width d 300 p s, duty cycle d 2% 5: essentially independent of operati ng temperature typical characteristics
FDT55AN06LA0 n-channel powertrench ? mosfet FDT55AN06LA0 rev. a www.fairchildsemi.com 3 typical performance characteristics figure 1. on-region characteristics figure 2. transfer ch aracteristics figure 3. on-resistance variation vs . figure 4. body diode forward voltage drain current and gate voltage variation vs. source current and temperature figure 5. capacitance char acteristics figure 6. gate charge characteristics 2.02.53.03.54.0 1 10 -55 o c 150 o c *notes: 1. v ds = 20v 2. 250 p s pulse test 25 o c i d ,drain current[a] v gs ,gate-source voltage[v] 40 0.01 0.1 1 0.1 1 10 2 *notes: 1. 250 p s pulse test 2. t c = 25 o c v gs = 20 v 15 v 10 v 8 v 7 v 6 v 5 v 4 v 3 v i d ,drain current[a] v ds ,drain-source voltage[v] 30 0.00.51.01.5 0.1 1 10 *notes: 1. v gs = 0v 2. 250 p s pulse test 150 o c i s , reverse drain current [a] v sd , body diode forward voltage [v] 25 o c 40 0 10203040 20 25 30 35 40 45 50 *note: t c = 25 o c v gs = 20v v gs = 10v r ds(on) [ m : ] , drain-source on-resistance i d , drain current [a] 0.1 1 10 0 200 400 600 800 1000 1200 1400 c oss c iss c iss = c gs + c gd ( c ds = shorted ) c oss = c ds + c gd c rss = c gd *note: 1. v gs = 0v 2. f = 1mhz c rss capacitances [pf] v ds , drain-source voltage [v] 30 0246810 0 2 4 6 8 10 *note: i d = 11a v ds = 12v v ds = 30v v ds = 48v v gs , gate-source voltage [v] q g , total gate charge [nc]
FDT55AN06LA0 n-channel powertrench ? mosfet FDT55AN06LA0 rev. a www.fairchildsemi.com 4 typical performance characteristics (continued) figure 7. breakdown voltage variation figure 8. on-resistance variation vs. temperature vs. temperature figure 9. maximum safe operating area figure 10. maximum drain current vs. case temperature figure 11. transient thermal response curve -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 *notes: 1. v gs = 0v 2. i d = 250 p a bv dss , [normalized] drain-source breakdown voltage t j , junction temperature [ o c ] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 *notes: 1. v gs = 10v 2. i d = 11a r ds(on) , [normalized] drain-source on-resistance t j , junction temperature [ o c ] 1 10 100 0.01 0.1 1 10 100 20 p s 100 p s 1ms 10ms i d , drain current [a] v ds , drain-source voltage [v] operation in this area is limited by r ds(on) *notes: 1. t c = 25 o c 2. t j = 150 o c 3. single pulse dc 25 50 75 100 125 150 0 2 4 6 8 10 12 i d , drain current [a] t c , case temperature [ o c ] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 0.01 0.1 1 10 0.01 0.1 0.2 0.05 0.02 *notes: 1. z t jc (t) = 14 o c/w max. 2. duty factor, d= t 1 /t 2 3. t jm - t c = p dm * z t jc (t) 0.5 single pulse thermal response [ z t jc ] rectangular pulse duration [sec] 30 t 1 p dm t 2
FDT55AN06LA0 n-channel powertrench ? mosfet FDT55AN06LA0 rev. a www.fairchildsemi.com 5 gate charge test circuit & waveform resistive switching te st circuit & waveforms unclamped inductive switching test circuit & waveforms
FDT55AN06LA0 n-channel powertrench ? mosfet FDT55AN06LA0 rev. a www.fairchildsemi.com 6 peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g sam e type as d u t v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l i sd 10v v gs ( d riv e r ) i sd ( d u t ) v ds ( dut ) v dd b ody d iode forw ard volta g e d ro p v sd i fm , b ody d iode forw ard c urrent b ody d iode r everse c urrent i rm b ody d iode r ecovery dv/dt di/dt d = g ate p ulse w idth g ate pulse period -------------------------- dut v ds + _ driver r g sam e type as d u t v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l l i sd 10v v gs ( d riv e r ) i sd ( d u t ) v ds ( dut ) v dd b ody d iode forw ard volta g e d ro p v sd i fm , b ody d iode forw ard c urrent b ody d iode r everse c urrent i rm b ody d iode r ecovery dv/dt di/dt d = g ate p ulse w idth g ate pulse period -------------------------- d = g ate p ulse w idth g ate pulse period --------------------------
FDT55AN06LA0 n-channel powertrench ? mosfet FDT55AN06LA0 rev. a www.fairchildsemi.com 7 mechanical dimensions 3.00 r 0.10 7.00 r 0.30 0.65 r 0.20 0.08max 3.50 r 0.20 1.60 r 0.20 (0.46) (0.89) (0.60) (0.60) 1.75 r 0.20 0.70 r 0.10 4.60 r 0.25 6.50 r 0.20 (0.95) (0.95) 2.30 typ 0.25 max1.80 0 q ~10 q +0.10 C0.05 0.06 +0.04 C0.02 sot-223
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